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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO = 80 V *DC Current Gain-- : hFE = 750(Min) @ IC= 2A *Complement to Type MJE702T
MJE802T
APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 80
UNIT V
Collector Current-Continuous Base Current
PC Ti Tstg
Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
w w
PARAMETER
scs .i w
80 5 V V 4 A 0.1 50 150 -55~150 A W
.cn mi e
THERMAL CHARACTERISTICS
SYMBOL Rth j-c MAX 2.5 UNIT /W
Thermal Resistance, Junction to Case
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
MJE802T
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=1.5A; IB=30mA
2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB=40mA
B
3.0
V
VBE(on)-1
Base-Emitter On Voltage
IC=1.5A; VCE= 3V
2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= 4A; VCE=3V
3.0
V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
w w
scs .i w
VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100 VEB= 5V; IC= 0
IC=1.5A ; VCE= 3V
.cn mi e
0.1 0.1 0.5 2.0
mA
mA
mA
750
IC= 4A ; VCE= 3V
100
isc Websitewww.iscsemi.cn


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